TITLE

Defect accumulation during ion irradiation of crystalline Si probed by in situ conductivity

AUTHOR(S)
Battaglia, A.; Coffa, S.
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p306
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the defect evolution and accumulation in ion implanted crystalline silicon using in situ conductivity measurements. Relationship between conductivity and fluence; Introduction of divacancies and complex defects in band gap; Dominance of electron hopping in buried continuous amorphous layer.
ACCESSION #
4240963

 

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