Surface analysis of a GaAs electron source using Rutherford backscattering spectroscopy

Calabrese, R.; Guidi, V.
July 1994
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p301
Academic Journal
Measures the amount of cesium (Cs) on the surface of gallium arsenide (GaAs) photocathode activated in negative electron affinity conditions. Use of Rutherford backscattering spectroscopy; Absence of Cs desorption from the GaAs surface; Reactivation of photocathode surface through Cs feeding.


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