TITLE

In situ laser-induced fluorescence studies of laser chemical vapor deposition of TiN thin films

AUTHOR(S)
Xiangli Chen; Mazumder, Jyoti
PUB. DATE
July 1994
SOURCE
Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p298
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the fabrication of titanium nitride (TiN) films on silicon(100) substrate by chemical vapor deposition with carbon dioxide laser. Use of laser-induced fluorescence spectroscopy for obtaining the gas phase species concentration; Study on the growth mechanisms of TiN films; Observation of titanium atomic species on the substrate surface.
ACCESSION #
4240960

 

Related Articles

  • Superhard nanocrystalline composite materials: The TiN/Si[sub 3]N[sub 4] system. Veprek, S.; Reiprich, S. // Applied Physics Letters;5/15/1995, Vol. 66 Issue 20, p2640 

    Examines the thin films of novel superhard titanium nitride nanocrystals in amorphous Si[sub 3]N[sub 4] matrix. Use of plasma chemical vapor deposition; Resistance of films against oxidation; Background of the unusual properties exhibited by the ternary system.

  • Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited.... Danek, M.; Liao, M. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p1015 

    Investigates the resistivity and chemical stabilization of organometallic chemical vapor deposited titanium nitride (TiN) by plasma radio frequency nitridation. Details on the step coverage and defect density of the films; Reduction of carbon concentration in the films; Crystallization of TiN.

  • Low-temperature electron cyclotron resonance chemical vapor deposition of very low resistivity.... Bourmerzoug, Mohamed; Mascher, Peter // Applied Physics Letters;5/15/1995, Vol. 66 Issue 20, p2664 

    Examines the deposition of titanium nitride (TiN) thin films on silicon and indium phosphide (InP) substrate. Use of electron cyclotron resonance chemical vapor deposition technique; Deposition rate of the films; Stability of the TiN/InP structure.

  • Metalorganic chemical vapor deposition of TiN films for advanced metallization. Sandhu, Gurtej S.; Meikle, Scott G.; Doan, Trung T. // Applied Physics Letters;1/18/1993, Vol. 62 Issue 3, p240 

    Examines the advanced metallization in the chemical vapor deposition of titanium nitride films. Properties of thin TiN film deposits; Characterization of deposited films by resistivity, stoichiometry and etch rates; Susceptibility to ex situ contamination with low density.

  • Kinetic studies of laser chemical vapor deposition of titanium nitride. Chen, Xiangli; Mazumder, Jyoti // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3914 

    Presents information on a study which determined the kinetics of laser chemical vapor deposition (LCVD) of titanium nitride (TiN) films using pulsed dye laser induced fluorescence spectroscopy. Chemical reaction for the LCVD of TiN; Determination of rate-controlling elementary reactions for the...

  • Initial growth mechanism of atomic layer deposited TiN. Satta, A.; Vantomme, A.; Schuhmacher, J.; Whelan, C. M.; Sutcliffe, V.; Maex, K. // Applied Physics Letters;5/31/2004, Vol. 84 Issue 22, p4571 

    We have investigated the role of the substrate in the growth mechanism of TiN films grown by atomic layer deposition. The early stage of the film formation is dominated by a Volmer–Weber-type growth mode, driven by the ligand exchange of reactant molecules with preferential surface...

  • Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates. Özgür, &;#x00DC;.; Fu, Y.; Moon, Y. T.; Yun, F.; Morkoç, H.; Everitt, H. O.; Park, S. S.; Lee, K. Y. // Applied Physics Letters;6/6/2005, Vol. 86 Issue 23, p232106 

    Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on TiN porous network templates formed by in situ thermal annealing of Ti in ammonia. The room-temperature decay times obtained from biexponential fits to...

  • Selective area deposition of silicon-nitride and silicon-oxide by laser chemical vapor deposition and fabrication of microlenses. Sugimura, Atsuhiko; Fukuda, Yasushi; Hanabusa, Mitsugu // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3222 

    Examines the selective area deposition of silicon-nitride and silicon-oxide films by laser chemical vapor deposition with high area selectivity. Size for nitrides deposited on quartz substrates from silicon-hydrogen/nitrogen-hydrogen mixtures; Application of carbon dioxide lasers; Fabrication...

  • Properties of TiN films deposited at low temperature in a new plasma-based deposition system. Hoang, Nguyen Huy; McKenzie, D. R.; McFall, W. D.; Yin, Y. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6279 

    Presents a study which examined the properties of titanium nitride films deposited at low temperature in a plasma-based chemical vapor deposition system. Application of stoichiometry in deposition techniques; Advantages of the configuration; Optical properties of the thin films.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics