Effect of rapid thermal annealing on gate induced drain leakage in a n-channel

Hsieh, J.C.; Fang, Y.K.
November 1993
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3058
Academic Journal
Investigates the effect of rapid thermal annealing (RTA) on gate induced drain leakage in a n-channel metal-oxide-semiconductor field effect transistors. Increase of sub-breakdown leakage; Factors influencing the enhancement of the leakage current; Insensitivity of the avalanche breakdown voltage to RTA.


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