Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during

Voigtlander, Bert; Zinner, Amdre
November 1993
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3055
Academic Journal
Presents a scanning tunneling microscope capable of simultaneously imaging and molecular beam epitaxy growth at 600-900 Kelvin sample temperature. Formation of the Stranski-Krastanov layer; Inversion of the aspect ratio of the islands with increasing coverage; Advantage of the device.


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