TITLE

Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical

AUTHOR(S)
Pan, N.; Elliott, J.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3029
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the low temperature growth of indium aluminum arsenide buffer layers on indium phosphide substrates by metalorganic chemical vapor deposition. Use of combined trimethylarsenic and arsine; Exhibition of excellent surface morphology; Confirmation of the absence of conductive impurity spikes at the epitaxial/substrate interface.
ACCESSION #
4240924

 

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