TITLE

Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using

AUTHOR(S)
Boudreau, Marcel; Boumerzoug, Mohamed
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3014
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the chemical vapor deposition of silicon oxynitrides thin films. Use of tris(dimethylamino)silane as organosilicon source; Use of an electron cyclotron resonance plasma enhanced chemical vapor deposition reactor; Presence of two levels of carbon; Existence of low levels of bonded hydrogen; Determination of the deposition rate.
ACCESSION #
4240919

 

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