Electron cyclotron resonance chemical vapor deposition of silicon oxynitrides using

Boudreau, Marcel; Boumerzoug, Mohamed
November 1993
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3014
Academic Journal
Examines the chemical vapor deposition of silicon oxynitrides thin films. Use of tris(dimethylamino)silane as organosilicon source; Use of an electron cyclotron resonance plasma enhanced chemical vapor deposition reactor; Presence of two levels of carbon; Existence of low levels of bonded hydrogen; Determination of the deposition rate.


Related Articles

  • Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an... Yoon, S.F.; Yang, H. // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p5277 

    Presents a study which examined the effects caused by pressure on the deposition of hydrogenated amorphous carbon (a-C:H) thin films with the use of electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. Achievement of the ions which were accelerated under a constant direct...

  • Nitrogen incorporation in amorphous SiCN layers prepared from electron cyclotron resonance plasmas. Barbadillo, L.; Gómez, F.J.; Hernández, M.J.; Piqueras, J. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 5, p603 

    Abstract. Electron cyclotron resonance plasma chemical vapor deposition with nitrogen, methane, and argon-diluted silane as precursors has been used to prepare SiCN thin films. Optical emission from CN species in the plasma has been observed. Infrared measurements show that most of the nitrogen...

  • Preparation of diamondlike carbon films by electron cyclotron resonance chemical vapor deposition. Nagai, I.; Ishitani, A.; Kuroda, H.; Yoshikawa, M.; Nagai, N. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p2890 

    Describes the preparation of diamondlike carbon (DLC) films through electron cyclotron resonance chemical vapor deposition. Properties of DLC; Composition of films deposited at low cavity bias voltage.

  • Structural characteristics of carbon nanorods and nanotubes grown using electron cyclotron resonance chemical vapor deposition. Yun Sung Woo, C. S.; Duk Young Jeon; In Taek Han, C. S.; Young Jun Park, C. S.; Ha Jin Kim, C. S.; Jae Fun Jung, C. S.; Jong Mm Kim, C. S.; Nae Sung Lee // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6789 

    Different types of carbonaceous materials were synthesized by electron cyclotron resonance chemical vapor deposition on Ni-coated glass substrates with radio-frequency (rf) self-biasing using a gas mixture of CH[sub 4] and Ar. Vertically aligned carbon nanorods and multiwalled carbon nanotubes...

  • Electron cyclotron resonance plasma-enhanced filament-assisted diamond growth. Tsai, W.; Reynolds, G.J. // Applied Physics Letters;3/23/1992, Vol. 60 Issue 12, p1444 

    Presents technique for growing high-purity polycrystalline diamond thin films. Combination of filament-assisted chemical vapor deposition and electron cyclotron resonance plasma; Significance of hydrogen plasma in the selective etching of nondiamond components; Importance of low-energy...

  • Pulse modulated electron cyclotron resonance plasma for chemical vapor deposition of diamond films. Hatta, A.; Kadota, K. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1602 

    Examines the pulse modulated electron cyclotron resonance plasma for the chemical vapor deposition of diamond films. Advantages of pulse modulation; Synthesis of high quality diamond films; Observation of a decrease in thermal flux.

  • Hydrogen incorporation in silicon nitride films deposited by remote electron-cyclotron-resonance chemical vapor deposition. Kotecki, David E.; Chapple-Sokol, Jonathan D. // Journal of Applied Physics;2/1/1995, Vol. 77 Issue 3, p1284 

    Examines the incorporation of hydrogen in films of silicon nitride deposited by remote electron-cyclotron-resonance chemical vapor deposition. Use of silicon precursor, ammonia and deuteroammonia; Application of optical emission spectroscopy; Findings of temperature programmed desorption...

  • Light emission from Si nanoclusters formed at low temperatures. Pi, X. D.; Zalloum, O. H. Y.; Roschuk, T.; Wojcik, J.; Knights, A. P.; Mascher, P.; Simpson, P. J. // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p103111 

    Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures ≤=875 °C has been investigated. We find that Si-ncls grow very slowly after...

  • Intense blue–white luminescence from carbon-doped silicon-rich silicon oxide. Se-Young Seo; Kwan-Sik Cho, J. F.; Shin, Jung H. // Applied Physics Letters;2/2/2004, Vol. 84 Issue 5, p717 

    The effect of carbon doping on the enhancement of visible luminescence from silicon-rich silicon oxide (SRSO), which consists of Si nanoclusters embedded inside a SiO[sub 2] matrix, is investigated. C-doped SRSO films were fabricated by electron cyclotron resonance-plasma enhanced chemical vapor...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics