Pulsed-laser ablation growth of epitaxial ZnSe[sub 1-x]S[sub x] films and superlattices with

McCamy, J.W.; Lowndes, Douglas H.
November 1993
Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3008
Academic Journal
Presents a method for growing epitaxial semiconductor alloys with continuously variable composition. Use of a single pulsed laser ablation target of fixed composition; Removal of the principal barrier to pulsed-laser ablation (PLA) growth ; Application of method for PLA growth of other compound semiconductor films and heterostructures.


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