TITLE

Proton irradiation effects on strained Si[sub 1-x]Ge[sub x]/Si heterostructures

AUTHOR(S)
Park, J.S.; Lin, T.L.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3497
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of proton irradiation on strained Si[sub 1-x]Ge[sub x]/Si heterostructures. Use of proton accelerator for irradiation; Fabrication of p[sup +]-Si[sub 1-x]Ge[sub x]/Si heterojunction diodes by molecular beam epitaxy; Measurement of current-voltage characteristics as a function of temperature before and after irradiation.
ACCESSION #
4240901

 

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