TITLE

Fabrication of GaAs nanostructures with a scanning tunneling microscope

AUTHOR(S)
Snow, E.S.; Campbell, P.M.
PUB. DATE
December 1993
SOURCE
Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3488
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the method for fabricating gallium arsenide nanostructures with a scanning tunneling microscope (STM). Use of STM to pattern a thin epitaxial silicon (Si) layer; Criteria to grow a stable epitaxial Si capping layer; Application of the fabrication process for other potential III-V materials.
ACCESSION #
4240897

 

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