In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser

Raffle, Y.; Kuszelewicz, R.
December 1993
Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3479
Academic Journal
Examines the use of in situ reflectometry with laser beam to monitor aluminum arsenide (AlAs) and gallium arsenide (GaAs) layer thickness grown by metalorganic vapor phase epitaxy. Calibration of AlAs and GaAs optical indices; Results of the X-ray diffraction and reflectivity measurements of Bragg reflectors; Accuracy of the wavelength stop band center.


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