GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical

Asif Khan, M.; Kuznia, J.N.
December 1993
Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3470
Academic Journal
Examines the fabrication of gallium nitride (GaN)/aluminum nitride (AlN) short-period superlattices using switched atomic layer epitaxy. Deposition of the superlattice structures over basal plane sapphire; Structure, crystallinity and optical properties of GaN/AlN superlattices; Results of the cross-sectional transmission electron micrography analysis.


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