TITLE

High-resistivity regions in n-type InGaAsP produced by [sup 4]He[sub +] ion bombardment at 80

AUTHOR(S)
Comedi, D.; Zhao, J.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2126
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the high-resistivity regions in silicon-doped lattice-matched indium gallium arsenic phosphide (InGaAsP) on indium phosphide by helium ion bombardment. Sheet resistance in InGaAsP layers; Influence of post-implantation annealing on sheet resistance; Achievement of resistivities by implantation and annealing.
ACCESSION #
4240856

 

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