TITLE

Defects in porous silicon investigated by optically detected and by electron paramagnetic

AUTHOR(S)
Meyer, B.K.; Hofmann, D.M.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2120
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the defect properties of porous silicon (PS) by electron paramagnetic resonance techniques. Dominance of dangling bond center (P[sub b0]) defects in PS; Effects of resonance in P[sub b0] on photoluminescence; Connection of emission band to the defect-related combination of P[sub b0] centers.
ACCESSION #
4240854

 

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