TITLE

Record low SiO[sub 2]/Si interface state density for low temperature oxides prepared by direct

AUTHOR(S)
Chen, Z.; Yasutake, K.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the development of silica (SiO[sub 2])/silicon (Si) interface state density for low temperature deposited oxides on Si substrates. Difficulty of growing oxides in plasma-enhanced chemical vapor deposition (PEVCD); Post-deposition treatment of PEVCD oxide; Effects of aluminum layer on Si/SiO[sub 2] interface defect passivation.
ACCESSION #
4240853

 

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