TITLE

10 GHz bandwidth monolithic p-i-n modulation-doped field effect transistor photoreceiver

AUTHOR(S)
Dutta, N.K.; Lopata, J.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a photoreceiver circuit with the use of indium gallium arsenide (InGaAs) p-i-n photodiode and InGaAs/indium aluminum arsenide modulation-doped field effect transistor based amplifier. Measurement of the circuit modulation response by component analyzer; Detection of bandwidths circuits with photodiodes.
ACCESSION #
4240852

 

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