10 GHz bandwidth monolithic p-i-n modulation-doped field effect transistor photoreceiver

Dutta, N.K.; Lopata, J.
October 1993
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2115
Academic Journal
Fabricates a photoreceiver circuit with the use of indium gallium arsenide (InGaAs) p-i-n photodiode and InGaAs/indium aluminum arsenide modulation-doped field effect transistor based amplifier. Measurement of the circuit modulation response by component analyzer; Detection of bandwidths circuits with photodiodes.


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