Temporal development of electric field structures in photoconductive GaAs switches

Schoenbach, K.H.; Kenney, J.S.
October 1993
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2100
Academic Journal
Examines the temporal development of electric field distribution in gallium arsenide (GaAs) switches. Effect of temperature on band-gap energy in photoconductor; Observation of the different patterns of development in photocurrent; Impact of voltage on lock-mode transit in switch.


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