Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

Zhou, G.L.; Ma, Z.
October 1993
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2094
Academic Journal
Investigates the growth of silicon germanide (SiGe) graded buffer layers on molecular beam epitaxy with the use of silicon (Si) wafers. Formation of dislocations at the SiGe graded buffer and Si substrate interface; Effects of SiGe buffer on threading dislocations; Growth of SiGe layers on SiGe graded buffers.


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