TITLE

Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

AUTHOR(S)
Zhou, G.L.; Ma, Z.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2094
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the growth of silicon germanide (SiGe) graded buffer layers on molecular beam epitaxy with the use of silicon (Si) wafers. Formation of dislocations at the SiGe graded buffer and Si substrate interface; Effects of SiGe buffer on threading dislocations; Growth of SiGe layers on SiGe graded buffers.
ACCESSION #
4240845

 

Related Articles

  • Si Wafer Thinning Techniques Compatible With Epitaxy of CdTe Buffer Layers. Markunas, J.; Jacobs, R.; Smith, P.; Pellegrino, J. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1809 

    Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order of 8 μm to 12 μm, have helped reduce...

  • Metalorganic molecular beam epitaxy of 1.3 mum quaternary layers and heterostructure lasers. Hamm, R.A.; Ritter, D.; Temkin, H.; Panish, M.B.; Vandenberg, J.M.; Yadvish, R.D. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1893 

    Investigates the metalorganic molecular beam epitaxy of indium gallium arsenic phosphide quaternary layers. Dependence of gallium incorporation on the growth temperature; Increase of photoluminescence linewidth; Measurement of the threshold current densities.

  • In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As. Gerard, Jean-Michel // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2096 

    Examines the growth mode shift upon indium arsenide deposition by molecular beam epitaxy on a pseudomorphic buffer layer grown on gallium arsenide. Sensitivity of the shift critical thickness to indium composition; Surface segregation of indium atoms; Impact of film thickness on the growth mode.

  • Optical characterization of InAs monolayer structures grown on (113)A and (001) GaAs substrates. Melendez, J.; Mazuelas, A.; Dominguez, P.S.; Garriga, M.; Alonso, M.I.; Tapfer, L.; Briones, F. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p1000 

    Presents the optical characterization of indium arsenide (InAs) monolayer structures grown on (113)A and (001) gallium arsenide substrates. Growth of structures by atomic layer molecular beam epitaxy; Comparison between the band offset and InAs segregation of (113) and (001) samples.

  • High quality Si/Si[sub 1-x]Ge[sub x] layered structures grown using a mass-spectrometry.... Ni, W.-X.; Henry, A. // Applied Physics Letters;10/3/1994, Vol. 65 Issue 14, p1712 

    Examines the growth of high quality Si/Si[sub 1-x]Ge[sub x] layered structures using molecular beam epitaxy with a mass spectrometry controlled e-beam evaporation system. Improvement of the accuracy and stability of the evaporation rates; Achievement of good control of the growth parameters;...

  • Feature size effects on selective area epitaxy of InGaAs. Cotta, M.A.; Harriott, L.R. // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1936 

    Examines the use of ultrathin silicon layer as a mask in selective area epitaxy of indium gallium arsenide (InGaAs) by metalorganic molecular beam epitaxy. Increase in the growth rate of InGaAs; Details on the migration length of In and Ga containing species on the crystal surface; Impact of...

  • Effect of doping on electron traps in metalorganic molecular-beam epitaxial.... Paloura, E.C.; Ginoudi, A.; Kiriakidis, G.; Christou, A. // Applied Physics Letters;12/9/1991, Vol. 59 Issue 24, p3127 

    Examines the formation of trap centers in Ga[sub x]In[sub 1-x]P/GaAs layers fabricated by molecular beam epitaxy. Use of transient spectroscopy; Inhibition of trap center with the aid of silicon and silicon doping; Dependence of the activation energy on the gallium mole fraction.

  • Local silicon molecular beam epitaxy with microshadow masks. Hammerl, E.; Eisele, I. // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2221 

    Presents a method for patterning of silicon layers grown by molecular beam epitaxy. Use of microshadow masks; Study of the geometrical shape of the deposited mesa pattern; Inclination of the mesa pattern.

  • Characterization of heteroepitaxial CuIn[sub 3]Se[sub 5] and CuInSe[sub 2] layers on Si substrates. Tiwari, A.N.; Blunier, S. // Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3347 

    Examines the growth of CuIn[sub 3]Se[sub 5] on CuInSe[sub 2]/Si(111) substrates by molecular beam epitaxy. Description of the photoemission properties of CuInSe[sub 2] and CuIn[sub 3]Se[sub 5] layers; Exhibition of peak structure in CuInSe[sub 2] valence band; Importance of CuInSe[sub 2] for...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics