Effect of high temperature processing of Si/SiO[sub 2]/Si structures on their response to x-ray

Paillet, P.; Herve, D.
October 1993
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2088
Academic Journal
Examines the effect of high temperature processing of silicon (Si)/silica (SiO[sub 2])/Si structures on their response to x-ray radiation. Introduction of electron traps by temperature annealing of structures; Effects of temperature annealing on oxygen-vacancy complexes; Use of high temperature annealing in reducing the separation implantation of oxygen.


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