TITLE

Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by

AUTHOR(S)
Higgs, V.; Kittler, M.
PUB. DATE
October 1993
SOURCE
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2085
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the electron beam-induced current technique (EBIC) and cathodoluminescence (CL) spectroscopy of misfit dislocations in silicon (Si)/Si germanide structures. Effects of excitons on CL intensity; Observation of nonuniform contrast in structures by EBIC measurements; Detection of misfit dislocations in Ni-contaminated sample by CL image.
ACCESSION #
4240842

 

Related Articles

  • A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals. Gonz�lez, M. A.; Mart�nez, O.; Jim�nez, J.; Frigeri, C.; Weyher, J. L. // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p781 

    Dislocations in Si-doped liquid-encapsulated Czochralski GaAs crystals have been studied by spectrum imaging cathodoluminescence. The interaction between the dislocations and the crystal matrix results in complex atmospheres, which can extend several tens of micrometers around the dislocations....

  • Cathodoluminescence study on dislocations in silicon. Sekiguchi, T.; Sumino, K. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3253 

    Focuses on a study which assessed the characteristics of cathodoluminescence from silicon crystals with various configurations of dislocation. Information on plastic deformation; Results; Discussion; Conclusion.

  • Formation of misfit dislocations during Zn-diffusion-induced intermixing of a GaInAsP/InP.... Park, Hyo-Hoon; Eun Soo Nam; Yong Tak Lee; El-Hang Lee; Jeong Yong Lee // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p2025 

    Examines the formation of misfit dislocations during Zn-diffusion-induced intermixing of a GaInAsP/InP heterostructure. Creation of stacking faults; Explanation on the strain relaxation in the intermixed region; Features for the formation of misfit dislocations in the intermixing layers.

  • Dislocation filtering in SiGe and InGaAs buffer layers grown by selective lateral overgrowth method. Bryskiewicz, T. // Applied Physics Letters;3/6/1995, Vol. 66 Issue 10, p1237 

    Examines the dislocation density of Si[sub 1-x] and In[sub x]Ga[sub 1-x]As alloy semiconductors on silicon (Si) and gallium arsenide (GaAs) substrates. Approximation of Si[sub 1-x]Ge[sub x] thickness by formula; Observation of the alloy composition for In[sub x]Ga[sub 1-x]As layers; Difference...

  • Dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure. Albrecht, M.; Strunk, H.P.; Hull, R.; Bonar, J.M. // Applied Physics Letters;5/3/1993, Vol. 62 Issue 18, p2206 

    Examines dislocation glide in {110} planes in semiconductors with diamond or zinc-blende structure. Prediction of the misfit; Use of conventional contrast analysis; Line direction and dislocation angle of the misfit.

  • Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions. Chen, Y.; Liu, X. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p549 

    Examines the structure and electronic properties of misfit dislocations in zinc selenide/gallium arsenide (001) heterojunctions. Dominance of exciton and DA pair recombinations in the photoluminescence spectra; Comparison of the efficacy of irregular dislocations with dislocations found along...

  • Dislocation energies and hardness of semiconductors. Sher, A.; Chen, A.-B.; Spicer, W. E. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p54 

    The dislocation energies and hardness of semiconductors are calculated by an extension of Harrison’s method. It is demonstrated in agreement with experiment that dislocation energies per unit length are proportional to d-3– d-9, where d is the bond length and hardness is...

  • Specific Features in the Generation and Motion of Dislocations in Heat-Treated Silicon Wafers. Mezhennyı, M. V.; Mil’vidskiı, M. G.; Pavlov, V. F.; Reznik, V. Ya. // Physics of the Solid State;Jul2002, Vol. 44 Issue 7, p1284 

    The specific features in the generation and motion of dislocations in silicon single-crystal wafers after different heat treatments are investigated by the four-point bending technique. It is demonstrated that annealing of silicon single-crystal wafers at a temperature of 450°C leads to their...

  • Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by.... Graham, R.J.; Ravi, K.V. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1310 

    Investigates the impurities and defects in single crystals in diamond films grown by the combustion-flame method. Use of cathodoluminescence in a transmission electron microscope; Presence of nitrogen in the defect forms; Correlation of band A emission with dislocations; Variation of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics