Layer-by-layer growth of GaAs studied by glancing angle scattering of fast ions

Fujii, Yoshikazu; Narumi, Kazumasa
October 1993
Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2070
Academic Journal
Examines the angular distribution of the scattered ions on the surface of gallium arsenide (GaAs) during its molecular beam epitaxial growth. Observation of ion oscillations from the growing surface; Effect of surface step density on the intensity oscillations; Change in the ion distribution during GaAs growth.


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