TITLE

Gate-voltage dependence of the critical current of the superconducting field effect transistor

AUTHOR(S)
Okamoto, M.; Ohkura, Y.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2473
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the saturation of critical current as a function of gate voltage in niobium-silicon-niobium superconducting field effect transistor. Mobility of silicon fitted to the experimental curve; Indication of surface scattering effect causing saturation phenomenon; Significance of the power law affecting dependence of critical current on gate voltage.
ACCESSION #
4240814

 

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