Gate-voltage dependence of the critical current of the superconducting field effect transistor

Okamoto, M.; Ohkura, Y.
November 1992
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2473
Academic Journal
Analyzes the saturation of critical current as a function of gate voltage in niobium-silicon-niobium superconducting field effect transistor. Mobility of silicon fitted to the experimental curve; Indication of surface scattering effect causing saturation phenomenon; Significance of the power law affecting dependence of critical current on gate voltage.


Related Articles

  • Voltage-current characteristics of a high T[sub c] superconducting field effect device. Xi, X.X.; Doughty, C. // Applied Physics Letters;11/9/1992, Vol. 61 Issue 19, p2353 

    Measures the source-drain voltage-current characteristics of a high temperature superconducting field effect device. Similarities of V-I curves to those of a metal-oxide-semiconductor field-effect transistor; Exhibition of lower dissipation by the superconducting channel; Thickness and high...

  • Electric field effect in high T[sub c] superconducting ultrathin YBa[sub 2]Cu[sub 3]O-sub 7-x].... Xi, X.X.; Li, Q.; Doughty, C.; Kwon, C.; Bhattacharya, S.; Findikoglu, A.T.; Venkatesan, T. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3470 

    Examines the formation of multilayer high T[sub c] superconducting field-effect transistor-like structure from ultrathin YBa[sub 2]Cu[sub 3]O[sub 7-x] films. Modulation of the normal state properties; Resistance modulation of the films; Composition of the superconducting field-effect transistor.

  • Voltage-induced modulation of Josephson current. Okabe, Yoichi; Takeuchi, Kiyoshi; Takatsu, Motomu // Journal of Applied Physics;7/15/1986, Vol. 60 Issue 2, p707 

    Focuses on a study which proposed a type of three-terminal superconducting device, in which the supercurrent flowing through a weak link is controlled by the electric potential directly applied to the link. Information on the Josephson field-effect transistor; Methodology of the study; Results...

  • Superconducting InGaAs junction field-effect transistors with Nb electrodes. Kleinsasser, A. W.; Jackson, T. N.; McInturff, D.; Rammo, F.; Pettit, G. D.; Woodall, J. M. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1909 

    We describe the design, fabrication, and characterization of superconducting In0.47Ga0.53As junction field-effect transistors (JFETs) with Nb source and drain electrodes. In0.47Ga0.53As has the advantage of combining large coherence length and high Schottky barrier transmission, making it a very...

  • Electric field effect control of a superconducting YBa[sub 2]Cu[sub 3]O[sub 7] inductor. Gim, Y.; Doughty, C.; Xi, X.X.; Amar, A.; Venkatesan, T.; Wellstood, F.C. // Applied Physics Letters;6/14/1993, Vol. 62 Issue 24, p3198 

    Examines the fabrication of a thin film superconducting YBa[sub 2]Cu[sub 3]O[sub 7] field effect transistor. Alteration of areal carrier density on voltage application; Measurement of loop inductance changes using a direct current superconducting device; Use of in situ pulsed laser deposition.

  • Matrix readout scheme for superconducting tunnel junction arrays. Martin, D. D. E.; Martin, D.D.E.; Peacock, A.; Verhoeve, P.; Poelaert, A.; Venn, R. // Review of Scientific Instruments;Sep2000, Vol. 71 Issue 9 

    We report on the design and testing of a new readout scheme for superconducting tunnel junction (STJ) arrays. By grouping the electrodes in rows and columns, this method drastically reduces the number of connections and electronic circuits required for reading out a large format array of...

  • Comment on 'Temporal response of a high-T[sub c] superconducting field-effect transistor'.... Chandrasekhar, N.; Valls, Oriol T. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2589 

    Comments on a study regarding the temporal response of a high-T[sub c] superconducting field-effect transistor. Factors influencing the nature of electric field effects in high temperature superconductors; Analysis on relaxed oscillatory changes; Correlation with the oxygen migration model.

  • Response to 'Comment on 'Temporal response of a high-T[sub c] superconducting field effect.... Schneider, R.; Auer, R. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2590 

    Responds to comments regarding an article on temporal response of a high-T[sub c] superconducting field effect transistor. Application of rectangular pulses to the gate electrode; Factors influencing qualitatively damped oscillations; Analysis on the frequency and relaxation time of the transistor.

  • Electric field effects in superconducting YBa2Cu3O7-x thin films using field-effect transistor structures. Taheri, E. H.; Cochrane, J. W.; Russell, G. J. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p761 

    Presents a study which examined the electric field effects in superconducting yttrium barium[sub2]copper[sub3]oxygen[sub7-x] thin films with the use of field-effect transistor structures. Details of multilayer thin film deposition techniques; Results; Discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics