TITLE

Heterostructure field-effect transistor optical modulator in the InGaAs/AlGaAs material system

AUTHOR(S)
Vang, T.A.; Taylor, G.W.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2464
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the heterostructure field-effect transistor optical modulator in waveguide geometry using strained indium gallium arsenide quantum wells (QW). Use of Kramers-Kronig transformation to show potential low chirp; Importance of gate and collector in QW absorption modulation; Reduction of depletion field upon applying collector potential.
ACCESSION #
4240811

 

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