TITLE

Symmetry properties of Er[sup 3+] related centers in In[sub 1-x]Ga[sub x]P with low alloy

AUTHOR(S)
Buyanova, I.A.; Neuhalfen, A.J.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2461
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Determines the symmetry properties of erbium[sup 3+]-related centers in indium gallium phosphide epitaxial layers. Explanation on the method of polarized excitation spectroscopy; Polarization of erbium[sup 3+]-related luminescence under polarized excitation; Proposal of two transition mechanisms to explain the polarized luminescence.
ACCESSION #
4240810

 

Related Articles

  • Nature of the 1.5040–1.5110-eV emission band in GaAs. Beye, Aboubaker C.; Neu, Gérard // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3549 

    Presents an information on a study that examined the luminescence spectra of molecular beam epitaxy grown GaAs layer. Methodology of the study; Results and discussion on the study.

  • Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam.... Buyanova, I.A.; Chen, W.M. // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3676 

    Investigates the mechanism for thermal quenching of luminescence in silicon germanide/silicon structures grown by molecular beam epitaxy. Effect of post-growth thermal annealing; Reduction of grown-in nonradiative defects; Demonstration of post-growth hydrogenation; Contribution of nonradiative...

  • Epitaxial YBa[sub 2]Cu[sub 3]O[sub 7-delta] on GaAs(001) using buffer layers. Fork, D.K.; Nashimoto, K. // Applied Physics Letters;3/30/1992, Vol. 60 Issue 13, p1621 

    Describes the epitaxy of YBa[sub 2]Cu[sub 3]O[sub 7-delta] on gallium arsenide (GaAs) substrate using epitaxial magnesium oxide (MgO) buffer layers. In situ deposition of MgO thin film by pulsed laser deposition; Characterization of epitaxy by four-circle x-ray diffraction technique; Details on...

  • Cathodoluminescence study of laser recrystallized CdTe layers. Fernandez, P.; Piqueras, J. // Applied Physics Letters;11/24/1997, Vol. 71 Issue 21, p3096 

    Investigates the laser recrystallized cadmium telluride layers grown by metalorganic vapor phase epitaxy. Use of the cathodoluminescence spectra to monitor the effect of the recrystallization procedure; Effect of laser recrystallization on the spectral distribution of luminescence.

  • Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures? Gebauer, J.; Zhao, R.; Specht, P.; Weber, E. R.; Bo¨rner, F.; Redmann, F.; Krause-Rehberg, R. // Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4313 

    We investigate native defects in nonstoichiometric GaAs layers grown at low temperatures by molecular-beam epitaxy (LT-GaAs) doped with Be. Ga vacancies (V[sub Ga]) are found by positron annihilation in all layers. The concentration of V[sub Ga] is independent of the Be doping in contrast to the...

  • Internal Structural Symmetry of Optimal Layered Structures. Gusev, E. L. // Acoustical Physics;Jan2001, Vol. 47 Issue 1, p45 

    Problems of the optimal synthesis of multilayer structures implementing the ultimate performance under the action of elastic waves are considered. It is required to design a multilayered structure by choosing the physical properties of materials, the thickness of the layers, their number, and...

  • Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and.... Rebohle, L.; von Borany, J. // Applied Physics Letters;11/10/1997, Vol. 71 Issue 19, p2809 

    Investigates the photoluminescence and electroluminescence (EL) properties of germanium (Ge)-implanted silicon dioxide (SiO[sub 2]) layers thermally grown on a silicon substrate. Comparison of Ge-implanted SiO[sub 2] layers with Si-implanted SiO[sub 2] films; Analysis of the PL spectra as a...

  • Growth of (100) oriented CdTe on Si using Ge as a buffer layer. Bhat, Ishwara; Wen-Sheng Wang // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p566 

    Investigates the epitaxial growth of (100) oriented cadmium telluride (CdTe) layers on silicon substrates using germanium as a buffer layer. Application of atmospheric pressure organometallic vapor phase epitaxy; Problem encountered in growing high quality CdTe; Influence of growth temperature...

  • Suppressing of island formation in surfactant-controlled solid phase epitaxy of germanium on.... Osten, H.J.; Bugiel, E. // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1918 

    Examines the suppression of island formation in epitaxial germanium (Ge) layers grown by surfactant-controlled solid phase epitaxy. Use of tellurium as the surfactant in Ge growth on silicon substrate; Lack of crystal formation during crystallization; Details on the crystalline quality of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics