Nonalloyed InGaAs/GaAs ohmic contacts for self-aligned ion implanted GaAs heterostructure field

Huang, J.H.; Abrokwah, J.K.
November 1992
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2455
Academic Journal
Investigates the nonalloyed indium gallium arsenide (InGaAs) ohmic contacts for self-aligned ion implanted heterostructure field effect transistors (HFET). Way of contacting HFET; Preservation of doping concentration and structure integrity of InGaAs layer; Proposal on low contact resistance InGaAs nonalloyed ohmic contacts by Woodall.


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