Minority carrier capture cross section of the EL[sub 2] defect in GaAs

Zaidi, M.A.; Maaref, H.
November 1992
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2452
Academic Journal
Determines minority carrier capture cross section of EL2 defect in gallium arsenide (GaAs). Investigation of defects responsible for nonradiative recombination in semiconductors using junction capacitance techniques; Measurement of majority carrier cross section of EL2 defect in GaAs; Methods of assessing majority and minority cross sections.


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