TITLE

Deep center photoluminescence study of low-temperature InP grown by molecular beam epitaxy

AUTHOR(S)
Yu, P.W.; Liang, B.W.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2443
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the low-temperature grown indium phosphide by photoluminescence (PL) spectroscopy with changes of excitation intensity and temperature. Presence of two deep broad PL bands in undoped and beryllium-doped materials; Determination of two deep levels by changing excitation intensity and temperature; Purpose of an Intervac gas cracker.
ACCESSION #
4240804

 

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