TITLE

Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin

AUTHOR(S)
Lush, G.B.; Melloch, M.R.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2440
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the microsecond lifetimes of moderately doped, thin film, n-GaAs/Al[sub 0.3]Ga[sub 0.7]As double heterostructure membranes. Enhancement of photon recycling caused by removal of substrate; Structure of double heterostructure showing hole etched in substrate; Measurement of decays for the 5 micrometer double heterostructure.
ACCESSION #
4240803

 

Related Articles

  • High linear density written transitions in exchange isolated Pt/CoCrTa multilayer thin films. Liu, Wen H.; Schouterden, Kris; Mei, Lin; Ho, Kuoksan; Lairson, Bruce M.; Payne, Alexander P. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p124 

    Multilayer Pt/CoCrTa thin-film structures have been prepared which display little intergranular exchange coupling and nearly 100% remanence in the perpendicular direction. Magnetic recordings of continuous square wave patterns have been made and characterized using an inductive contact recording...

  • Growth of untwinned Bi2Sr2Ca2Cu3Ox thin films by atomically layered epitaxy. Eckstein, J. N.; Bozovic, I.; Schlom, D. G.; Harris, J. S. // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1049 

    We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO3 substrates. These films are c-axis oriented as-layered and do not exhibit 90° in-plane defects, i.e., a-b ‘‘twinning.’’ By misorienting the surface...

  • Influence of Pt heterostructure bottom electrodes on SrBi[sub 2]Ta[sub 2]O[sub 9] thin film properties. Kim, Seung-Hyun; Seung-Hyun Kim; Kim, D. J.; Kim, D.J.; Maria, J.-P.; Kingon, A. I.; Streiffer, S. K.; Kingon, A.I.; Im, J.; Streiffer, S.K.; Auciello, O.; Krauss, A. R.; Krauss, A.R. // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    The properties of SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO[sub 2]/SiO[sub 2]/Si and Pt/ZrO[sub...

  • Photovoltaic structures formed by thermal annealing of electrodeposited CuInSe[sub2] in H[sub2]S. Kois, Julia; Bereznev, Sergei; Mellikov, Enn; Opik, Andres // Proceedings of the Estonian Academy of Sciences, Chemistry;Jun2003, Vol. 52 Issue 2, p51 

    Thin polycrystalline CuInSe[SUB2] films were electrodeposited onto ITO/In(O,S) and ITO covered glasses from aqueous solutions with various ratios of elements. The obtained structures were annealed at 450°C in H[SUB2]S. Current-voltage and impedance measurements were carried out for the...

  • Structural properties of Pt/p -InP heterostructures. Kim, T. W.; Yoon, Y. S.; Lee, J. Y. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p972 

    Ion-beam-assisted deposition of Pt on p-InP at room temperature was performed in order to produce Pt epitaxial films with high quality and Pt/p-InP (100) heterostructures with sharp interfaces. From the x-ray diffraction analysis, the grown film was found to be a Pt heteroepitaxial film. Auger...

  • Damage-induced high-resistivity regions in Al0.48In0.52As. Pearton, S. J.; Hobson, W. S.; Chakrabarti, U. K. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1786 

    The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is >105 Ω/[Laplacian_variant] after implantation for doses in the range 1012–8×1013 cm-2, and...

  • Submicron Si[sub 1-x]Ge[sub x]/Si epitaxial structure formation by wet oxidation of amorphous.... Prokes, S.M.; Rai, A.K. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p568 

    Examines the formation of submicron Si[sub 1-x]Ge[sub x]/silicon (Si) epitaxial heterostructure by wet oxidation of amorphous Si-germanium films. Diffusion of Si to forming oxides through a contamination layer; Creation of localized defect supersaturation; Mechanism of oxide formation during...

  • Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor.... Kim, T.W.; Jung, M. // Applied Physics Letters;8/31/1992, Vol. 61 Issue 9, p1101 

    Examines the interdiffusion problems of cadmium telluride (CdTe)/indium antimonide (InSb) heterointerfaces grown by temperature gradient vapor transport deposition. Range of CdTe growth temperature; Use of Raman spectroscopy; Stoichiometry of the CdTe/InSb heterostructures; Temperature range...

  • High-power operation of InP/InGaAsP double-channel planar buried-heterostructure lasers with asymmetric facet coatings. Koszi, L. A.; Temkin, H.; Pryzbylek, G. J.; Segner, B. P.; Napholtz, S. G.; Bogdanowicz, C. M.; Dutta, N. K. // Applied Physics Letters;12/28/1987, Vol. 51 Issue 26, p2219 

    We report the high-power operation of λ=1.3 μm InGaAsP double-channel planar buried-heterostructure lasers with asymmetric mirror coatings. A stack of four dielectric layers is used to raise the reflectivity of one facet to over 80%, and the thickness of a single layer coating on the...

  • Electrical properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) contact system. Lyakas, M.; Beregovsky, M.; Eizenberg, M.; Meyer, F. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1716 

    Studies the electrical properties of a thin layer deposited on a molecular beam epitaxial grown Si0.89Ge0.11/Si(001) heterostructure in a wide temperature range. Production of a single reaction product; Fermi level pinned with respect to the conduction band; Observation of two kinds of traps.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics