TITLE

Microcrystal growth of GaAs on a Se-terminated GaAlAs surface for the quantum-well box

AUTHOR(S)
Chikyow, Toyohiro; Koguchi, Nobuyuki
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2431
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates growth of gallium arsenide microcrystals on a selenium (Se)-terminated gallium aluminum arsenide (GaAlAs) surface for quantum-well box fabrication. Purpose of supplying Ga molecules to Se-terminated GaAlAs surface; Formation of Ga droplets; List of essential factors in the droplet epitaxy.
ACCESSION #
4240800

 

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