Negative differential conductance observed in a lateral double constriction device

Wu, J.C.; Wybourne, M.N.
November 1992
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2425
Academic Journal
Examines the fabrication of lateral double point contact devices using a split-gate high electron mobility transistor. Exhibition of S-shaped negative differential conductivity (SNDC) of solid state electronic devices; Purpose of depletion below the split gate of the devices; Control of SNDC by adjusting the gate bias.


Related Articles

  • High Frequency Operation (>10MHz) in Pentacene Thin-Film Transistors. Kitamura, Masatoshi; Arakawa, Yasuhiko // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p883 

    The current-gain cutoff frequency for bottom contact p-channel pentacene thin-film transistors (TFTs) with channel lengths of 2-10 μm has been investigated. A maximum cutoff frequency of 11.4 MHz was obtained from a pentacene TFT with a channel length of 2 μm and a saturation mobility of...

  • Ambipolar organic field-effect transistor based on an organic heterostructure. Rost, Constance; Gundlach, David J.; Karg, Siegfried; Rieß, Walter // Journal of Applied Physics;5/15/2004, Vol. 95 Issue 10, p5782 

    Ambipolar charge injection and transport are a prerequisite for a light-emitting organic field-effect transistor (OFET). Consequently, organic thin-film field-effect transistors based on a single material as active layer can typically either be operated as p-or as n-channel device. In this...

  • Mobility Diminution in a Nano-MOSFET due to Carrier Injection from the Ohmic Contacts. Riyadi, Munawar A.; Tan, Michael Loong Peng; Hashim, Abdul Manaf; Arora, Vijay K. // AIP Conference Proceedings;5/25/2011, Vol. 1341 Issue 1, p169 

    The mobility is being ballistic when the mean free path in a nanoscale transistor exceeds the channel length. The ballistic mobility is modeled and interpreted by analyzing transient velocity response to the electric field. The new model includes the transit-time delay that may become comparable...

  • Self-aligned contacts in silicon by nitrogen implantation. Theimer, J.; Maby, E. W.; Lieb, S.; MacCrone, R. K. // Journal of Applied Physics;1/15/1987, Vol. 61 Issue 2, p795 

    Presents a study that described a process for the formation of self-aligned contacts to the source and drain regions of a silicon insulated-gate field-effect transistor by means of nitrogen implantation. Information on the behavior of nitrogen implantation into silicon; Applications of nitrogen...

  • AlGaN/GaN high electron mobility field effect transistors with low 1/f noise. Levinshtein, M. E.; Rumyantsev, S. L.; Gaska, R.; Yang, J. W.; Shur, M. S. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    Low-frequency noise in the frequency region of 20 Hz to 20 kHz is investigated in AlGaN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The noise spectra have the form of the 1/f (flicker) noise. The measured Hooge parameter is as low as 0.0001. This value is comparable...

  • Highly anisotropic electron mobilities of GaAs/In[sub 0.2]Ga[sub 0.8]As/Al[sub 0.3]Ga[sub 0.7]As.... Schweizer, T.; Kohler, K.; Rothemund, W.; Ganser, P. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2736 

    Demonstrates the anisotropic electron mobilities of inverted high electron mobility transistor structures. Application of the Hall effect measurement; Relation between quantum well thickness and electron mobility; Observation of anisotropy at lower temperatures.

  • Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence. Parsons, C. A.; Kim, M. H.; Quinn, W. E.; Herrmann, H. B.; Swirhun, S. E.; Brierley, S. K. // Journal of Applied Physics;7/15/1994, Vol. 76 Issue 2, p1343 

    Discusses the nondestructive room temperature photoluminescence (PL) of the InGaAs channel of a pseudomorphic high electron mobility transistor as a function of bias applied to a semitransparent gate. Equation for the low-field conductivity mobility; Results of electrical and PL measurements.

  • Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties. Ng, G. I.; Pavlidis, D.; Quillec, M.; Chan, Y. J.; Jaffe, M. D.; Singh, J. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p728 

    A study of the properties of In0.52Al0.48As/In0.53+xGa0.47-xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes a biaxial compressive strain of 0.49% to 0.84% in the channel, increases...

  • Spectrum of hot-electron luminescence from high electron mobility transistors. Zappe, Hans P.; As, D.J. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2257 

    Analyzes the spectrum of hot-electron luminescence from high electron mobility transistors (HEMT). Implication of distinct recombination peaks for carrier distribution; Significance of real space transfer in HEMT; Fabrication of HEMT by molecular beam epitaxy with standard superlattice and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics