TITLE

Mechanism of chemical erosion of sputter-deposited C:H films

AUTHOR(S)
Schenk, A.; Biener, J.
PUB. DATE
November 1992
SOURCE
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2414
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the mechanism of thermally activated chemical erosion of sputter-deposited carbon:hydrogen (C:H) films. Desorption of methane as gaseous products; Determination of C-CH bond breaking as rate limiting step of hydrocarbon production; Occurrence of CH[sub 3] radical desorption from the surface of the C:H films.
ACCESSION #
4240794

 

Related Articles

  • Chemical erosion of amorphous hydrogenated boron films. Annen, A.; Jacob, W. // Applied Physics Letters;9/8/1997, Vol. 71 Issue 10, p1326 

    Examines the chemical erosion of amorphous hydrogenated boron films. Use of radio-frequency plasma deposition in thin film preparation; Application of ion-beam in the analysis of thin film composition and density; Influence of hydrogen electron cyclotron resonance plasmas in film erosion;...

  • Evidence of local and global scaling regimes in thin films deposited by sputtering: An atomic force microscopy and electrochemical study. Souza Cruz, Tersio G.; Kleinke, M. U.; Gorenstein, A. // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4922 

    The surface morphology of NiO[sub x] thin films deposited by rf sputtering was studied by atomic force microscopy and by cyclic voltammetry. Linear relationships were observed in log-log plots of the interface width versus window length and in log-log plots of the peak current versus scan rate....

  • Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature. Thorpe, T. P.; Qadri, S. B.; Wolf, S. A.; Claassen, J. H. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1239 

    Characterization results are given for a set of TiNx films grown on sapphire substrates at temperatures between 140 and 850 °C. A relationship between resistivity and spectral reflectivity is established, with highest reflectivities and lowest resistivities observed for the highest substrate...

  • Sputter deposition of YBa2Cu3O7-y thin films. Silver, R. M.; Talvacchio, J.; de Lozanne, A. L. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2149 

    Thin films of YBa2Cu3O7-y were prepared by magnetron sputtering. The films were characterized by x-ray diffraction, in situ x-ray photoelectron spectroscopy to determine the as-deposited oxygen content for various substrate temperatures, and scanning electron microscopy to analyze the...

  • Photoconductivity of CuInSe[sub 2] films. Rud�, V. Yu.; Rud�, Yu. V. // Semiconductors;Nov97, Vol. 31 Issue 11, p1151 

    CulnSe[sub 2] thin films were grown by vacuum sputtering of presynthesized material from a single source. The room-temperature photoconductivity spectra of the films were obtained. It was determined that the photoconductivity of these films depends strongly on the preparation conditions and,...

  • Origin of compositional variations in sputter-deposited Ti[sub x]W[sub 1-x] diffusion barrier.... Bergstrom, D.B.; Tian, F. // Applied Physics Letters;11/20/1995, Vol. 67 Issue 21, p3102 

    Investigates the origin of compositional variations in sputter-deposited Ti[sub x]W[sub 1-x] diffusion barrier layers. Utilization of Rutherford backscattering in determining the films deposited in argon; Use of TRIM calculations and Monte Carlo gas-transport simulations in the study; Reduction...

  • Crystallinity of a-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin film epitaxially grown.... Homma, N.; Okayama, S.; Takahashi, H.; Yoshida, I.; Morishita, T.; Tanaka, S.; Haga, T.; Yamaya, K. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1383 

    Examines the epitaxial deposition of an a-axis oriented YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin film on NdGaO[sub 3] (110) by 95 MHz magnetron sputtering. Result of an excitation frequency of 94.92 MHz; Observation of sharp streaks corresponding to the c-axis lattice parameter.

  • Chemical segregation in CoNiPt(SiO[sub 2]) alloy film. Murayama, Akihiro; Miyamura, Masao // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1186 

    Examines the chemical segregation in silicon dioxide-added CoNiPt alloy films for high-density longitudinal recording media. Composition of the sputtered films; Detection of silicon in grain boundary region; Formation of silicon atom in the films; Explanation on the magnetic and recording...

  • Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films. Rao, G. Mohan; Krupanidhi, S.B. // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p628 

    Examines the deposition of boron nitride thin film on silicon substrate by radiofrequency sputtering in the presence of an electron cyclotron resonance plasma. Identification of structural phases using infrared spectroscopy; Electrical properties of metal-insulator-semiconductor configuration;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics