Buried single-crystal CoSi[sub 2] layers in SiGe alloys made by ion beam synthesis

Jebasinski, R.; Mantl, S.
November 1992
Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2409
Academic Journal
Examines the formation of buried CoSi[sub 2] layers in silicon-germanium (SiGe) alloys by high dose cobalt ion implantation and annealing. Development of mesotaxy; Outdiffusion of Ge caused by silicide formation; Increase in Ge concentration of the adjacent SiGe layers.


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