TITLE

Proposal and verification of a new visible light emitter based on wide band gap II-VI

AUTHOR(S)
Phillips, M.C.; Wang, M.W.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1962
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a proposal for obtaining visible light emission from wide band gap semiconductors. Process for avoiding ohmic contacting problems in the heterojunction structure; Implementation of efficient minority carrier injection into the wider band gap semiconductor; Details on the electroluminescence spectra of the devices.
ACCESSION #
4240772

 

Related Articles

  • Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes. Nakagawa, Satoshi; Tsujimura, Hiroki; Okamoto, Kuniyoshi; Kubota, Masashi; Ohta, Hiroaki // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p171110 

    An accurate method of estimating polarized light emission was presented for nonpolar m-plane InGaN-based blue light emitting diodes, where the unpolarized component caused by unintentional light scattering was eliminated as noise. The polarization ratios of electroluminescence (EL) at 300 and...

  • Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio. Huang, Rui; Chen, Kunji; Dong, Hengping; Wang, Danqing; Ding, Honglin; Li, Wei; Xu, Jun; Ma, Zhongyuan; Xu, Ling // Applied Physics Letters;9/10/2007, Vol. 91 Issue 11, p111104 

    The authors had reported green-yellow electroluminescence (EL) from N-rich oxidized amorphous silicon nitride (a-SiN:O) light-emitting devices (LEDs) in a previous work. In this work, a significantly enhanced EL intensity was obtained in the LED by employing Si-rich a-SiN:O instead of N-rich...

  • Valence band structure of BaCuSF and BaCuSeF. Yanagi, Hiroshi; Tate, Janet; Park, Sangmoon; Park, Cheol-Hee; Keszler, Douglas A.; Hirano, Masahiro; Hosono, Hideo // Journal of Applied Physics;10/15/2006, Vol. 100 Issue 8, p083705 

    The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission measurements and full-potential linearized augmented plane wave band-structure calculations. In both compounds, the large dispersion near the top of the valence band is realized by admixed states of Cu 3d and...

  • Emission from rare-earth ions in GaN wurtzite crystals. Mezdrogina, M.; Danilovskii, E.; Kuz'min, R. // Inorganic Materials;Dec2011, Vol. 47 Issue 13, p1450 

    Intense studies of a wide-gap direct-zone semiconductor represented by GaN wurtzite crystals doped with rare-earth ions, namely, Eu, Er, Sm, and Tm, suggest the development of an alternative (compared to that with the use of InGaN layers) technology of fabrication of light-emitting diodes of...

  • Highly efficient deep blue organic electroluminescent device based on 1-methyl-9,10-di(1-naphthyl)anthracene. Ho, Meng-Huan; Wu, Yao-Shan; Wen, Shih-Wen; Lee, Meng-Ting; Chen, Teng-Ming; Chen, Chin H.; Kwok, Kwong-Chau; So, Shu-Kong; Yeung, Kai-Tai; Cheng, Yuen-Kit; Gao, Zhi-Qiang // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p252903 

    The author have developed 2-methyl-9,10-di(1-naphthyl)anthracene (α,α-MADN) as an effective wide band gap host material for Förster energy transfer to the unsymmetrical mono(styryl)amine deep blue fluorescent dopant (BD-1). This guest/host emitting system, at the optimal doping...

  • Photoelectric properties of tin disulfide. Dubrovskiı, G. B.; Shelykh, A. I. // Physics of the Solid State;Aug98, Vol. 40 Issue 8, p1295 

    Discusses the photoelectric properties of tin disulfide. Photoconductivity spectra of the crystals; Sequence of the commonest polytype of wide-gap semiconductor SnS[Sub 2].

  • Ultralow interface recombination velocity in ordered--disordered GaInP[sub 2] double.... van Geelen, A.; Thomeer, R.A.J. // Applied Physics Letters;1/23/1995, Vol. 66 Issue 4, p454 

    Investigates the charge-carrier lifetime of undoped GaInP[sub 2] in disordered-ordered-disordered GaInP[sub 2] double heterostructures (DH). Differences between the band gap in the disordered GaInP[sub 2] and ordered GaInP[sub 2]; Observation of photoluminescence spectrum in DH; Estimate of...

  • Photoelasticity and quadratic permittivity of wide-gap semiconductors. Davydov, S. Yu.; Tikhonov, S. K. // Semiconductors;Jul97, Vol. 31 Issue 7, p698 

    Expressions for the photoelastic constants are obtained on the basis of an analogy between the photoelastic and elastic properties of semiconductor crystals. Calculations were performed for wide-gap semiconductors (silicon carbide and boron, aluminum, and gallium nitrides) with sphalerite and...

  • Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers. Neudeck, Philip G.; Powell, J. Anthony; Beheim, Glenn M.; Benavage, Emye L.; Abel, Phillip B.; Trunek, Andrew J.; Spry, David J.; Dudley, Michael; Vetter, William M. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2391 

    Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics