TITLE

Observation of quantum wire formation at intersecting quantum wells

AUTHOR(S)
Goni, A.R.; Pfeiffer, L.N.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1956
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the bound states confined at the junction between two gallium arsenide quantum wells. Fabrication of the junction by cleaved edge overgrowth process; Use of optical emission and absorption spectroscopy to identify bound electron and hole states; Determination of conduction band confinement energies.
ACCESSION #
4240770

 

Related Articles

  • Observation of above-barrier quasi-bound states in asymmetric single quantum wells by.... Dossa, D.; Voon, Lok C. Lew Yan; Ram-Mohan, L.R.; Parks, C.; Alonso, R.G.; Ramdas, A.K.; Melloch, M.R. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2706 

    Examines the above-barrier quasi-bound states in asymmetric single quantum wells by piezomodulated reflectivity. Display of interband excitonic transitions from valence states; Observation on the quasi-bound states in interband transitions; Use of molecular beam epitaxy.

  • Largely enhanced bound-to-miniband absorption in an InGaAs multiple quantum well with.... Yu, Larry S.; Li, Sheng S.; Pin Ho // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2712 

    Examines the bound-to-miniband absorption in multiple quantum well and short-period superlattice barrier heterostructure. Enhancement of the net intersubband absorption; Determination of the optical absorption strength; Calculation of energy states and transmission coefficient.

  • Infrared absorption and photoconductive gain of quantum well infrared photodetectors. Choi, K.K.; Fotiadis, L. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p592 

    Examines the properties of a multiple quantum well infrared photodetector (QWIP) with a single bound state. Determination of the peak absorption energy by resonant state position; Diffusive nature of photoelectron distribution over QWIP; Correlation between photoelectron distribution and...

  • Control of quasi-bound states by electron Bragg mirrors in GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum.... Sung, B.; Chui, H.C. // Applied Physics Letters;5/6/1996, Vol. 68 Issue 19, p2720 

    Examines the effects of electron Bragg mirrors on quasi-bound states in gallium arsenide/Al[sub 0.3]Ga[sub 0.7]As quantum wells. Influence of varying electron mirror thickness on the quantum wells; Use of the envelope function approximation and semi-infinite superlattice limit of the electron...

  • Composite particles in quantum wells. Kovalev, V. M.; Chaplik, A. V. // JETP Letters;Dec2008, Vol. 88 Issue 7, p454 

    Bound states of composite particles in single and double quantum wells are studied. The spectrum and polarizability of an indirect trion and an indirect D - center (a negatively charged donor) in crossed electric and magnetic fields are found. Bound dielectron states in a single quantum well are...

  • Fano-type coupling of a bound paramagnetic state with 2D continuum. Rozhansky, I. V.; Averkiev, N. S.; Lähderanta, E. // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p335 

    We analyze an effect of a bound impurity state located at a tunnel distance from a quantum well (QW). The study is focused on the resonance case when the bound state energy lies within the continuum of the QW states. Using the developed theory we calculate spin polarization of 2D holes induced...

  • The Quantum Well of One-Dimensional Photonic Crystals. Liu, Xiao-Jing; Ma, Ji; Meng, Xiang-Dong; Li, Hai-Bo; Lu, Jing-Bin; Li, Hong; Chen, Wan-Jin; Wu, Xiang-Yao; Zhang, Si-Qi; Wu, Yi-Heng // Advances in Condensed Matter Physics;6/18/2015, Vol. 2015, p1 

    We have studied the transmissivity of one-dimensional photonic crystals quantum well (QW) with quantum theory approach. By calculation, we find that there are photon bound states in the QW structure (BA)6(BBABB)n(AB)6, and the numbers of the bound states are equal to n+1. We have found that...

  • Recombination dynamics of a localized exciton bound at basal stacking faults within the m-plane ZnO film. Yang, S.; Hsu, H. C.; Liu, W. -R.; Lin, B. H.; Kuo, C. C.; Hsu, C. -H.; Eriksson, M. O.; Holtz, P. O.; Hsieh, W. F. // Applied Physics Letters;7/7/2014, Vol. 105 Issue 1, p1 

    We investigated the carrier dynamics near basal stacking faults (BSFs) in m-plane ZnO epitaxial film. The behaviors of the type-II quantum wells related to the BSFs are verified through time-resolved and time-integrated photoluminescence. The decay time of the emission of BSFs is observed to...

  • Does luminescence show semiconductor interfaces to be atomically smooth? Warwick, C. A.; Jan, W. Y.; Ourmazd, A.; Harris, T. D. // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2666 

    Luminescence spectra from quantum wells are routinely interpreted in terms of atomically smooth and atomically abrupt interfaces. Here we show that this interpretation is inconsistent with photoluminescence, photoluminescence excitation, and quantitative microscopic (chemical lattice imaging)...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics