Annealing effect on the carrier concentration in heavily Si-doped n[sup +]-InGaAs

Watanabe, Noriyuki; Nittono, Takumi
October 1992
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1945
Academic Journal
Examines the annealing effect on the carrier concentration in silicon-doped in indium gallium arsenide epilayer grown on gallium arsenide substrate. Decrease in the carrier concentration caused by silicon atom movement; Reduction of dislocation density during the annealing process; Factors influencing the carrier mobility of the epilayer.


Related Articles

  • Recrystallization of pure and strontium-doped KCl crystals. Borisenko, E. B.; Gnesin, B. A. // Physics of the Solid State;Feb99, Vol. 41 Issue 2, p230 

    The kinetics of microstructure transformations are studied during annealing of deformed single crystals of KCl and KCl:0.05wt%Sr[sup 2+] at temperatures of (0.35-0.55)T[sub m] (where T[sub m] is the melting temperature) and during storage at room temperature. The effect of deformation rates...

  • Rapid thermal annealing of dopants implanted into preamorphized silicon. Seidel, T. E.; Knoell, R.; Poli, G.; Schwartz, B.; Stevie, F. A.; Chu, P. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p683 

    Focuses on a study which described rapid thermal annealing of dopants implanted into preamorphized silicon. Location where dislocation loops occur; Manner in which spinning dislocations are eliminated; Factors that nearly show normal diffusive behavior for B or arsenic dopants for 10-second...

  • Electrically active, ion implanted boron at the solubility limit in silicon. Liefting, J.R.; Schreutelkamp, R.J.; Vanhellemont, J.; Vandervorst, W.; Maex, K.; Custer, J.S.; Saris, F.W. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1134 

    Examines the electrically active ion implanted boron (B) at the solubility limit in silicon. Causes of the development of dislocation formation during a subsequent thermal anneal; Generation of crystal damage in Si ion implantation; Implication of thermal anneals for Si interstitial...

  • Direct observation of discrete layers of dislocation loops near the projected ion ranges in high-dose P+-implanted (001)Si by cross-sectional transmission electron microscopy. Hsu, S. N.; Chen, L. J.; Chao, W. Y. // Applied Physics Letters;8/7/1989, Vol. 55 Issue 6, p565 

    The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high-dose (5×1015–2×1016/cm2) P+-implanted (001)Si was observed by cross-sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of...

  • X-ray diffuse scattering study of the kinetics of stacking fault growth and annihilation in boron-implanted silicon. Luebbert, D.; Arthur, J.; Sztucki, M.; Metzger, T. H.; Griffin, P. B.; Patel, J. R. // Applied Physics Letters;10/21/2002, Vol. 81 Issue 17, p3167 

    Stacking faults in boron-implanted silicon give rise to streaks or rods of scattered x-ray intensity normal to the stacking fault plane. We have used the diffuse scattering rods to follow the growth of faults as a function of time when boron-implanted silicon is annealed in the range of 925 to...

  • Formation energies and relative stability of perfect and faulted dislocation loops in silicon. Cristiano, F.; Giles, L. F. // Journal of Applied Physics;6/15/2000, Vol. 87 Issue 12, p8420 

    Presents a study which investigated the relative thermal stability of two of the main defects found after high temperature annealing of preamorphized silicon wafers, namely, the perfect and the faulted dislocations loops. Defect characterization; Thermal evolution of dislocation loops; Results...

  • Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusion. Servidori, M.; Šourek, Z.; Solmi, S. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1723 

    Presents information on a study which introduced lattice damage in silicon wafers by silicon ion implantation at doses below and above amorphization threshold. Observations on the annealing behavior of damage; Effect of temperature evolution on the diffusion of dopant atoms; Formation and...

  • Dislocation cross-slip in GaN single crystals under nanoindentation. Huang, J.; Xu, K.; Gong, X. J.; Wang, J. F.; Fan, Y. M.; Liu, J. Q.; Zeng, X. H.; Ren, G. Q.; Zhou, T. F.; Yang, H. // Applied Physics Letters;5/30/2011, Vol. 98 Issue 22, p221906 

    The dislocation multiplication and movement mechanism in GaN single crystals has been studied using nanoindentation and cathodoluminescence. Dislocation loops can multiply and move from plane to plane by cross-slip, thus producing a wide plastic deformation in GaN during indentation. This...

  • Enhanced and retarded diffusion of arsenic in silicon by point defect engineering. Kong, Ning; Banerjee, Sanjay K.; Kirichenko, Taras A.; Anderson, Steven G. H.; Foisy, Mark C. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062107 

    Arsenic enhanced or retarded diffusion is observed by overlapping the dopant region with, respectively, interstitial-rich and vacancy-rich regions produced by Si implants. Enhanced diffusion can be attributed to interstitial-mediated diffusion during postimplant annealing. Two possible...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics