TITLE

Annealing effect on the carrier concentration in heavily Si-doped n[sup +]-InGaAs

AUTHOR(S)
Watanabe, Noriyuki; Nittono, Takumi
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1945
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the annealing effect on the carrier concentration in silicon-doped in indium gallium arsenide epilayer grown on gallium arsenide substrate. Decrease in the carrier concentration caused by silicon atom movement; Reduction of dislocation density during the annealing process; Factors influencing the carrier mobility of the epilayer.
ACCESSION #
4240766

 

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