Double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the quantum well

Tae-Kyung Yoo; Mandeville, Pierre
October 1992
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1942
Academic Journal
Presents a design for aluminum gallium arsenide/indium gallium arsenide (AlGaAs/InGaAs) heterostructure with graded composition in InGaAs quantum well. Determination of electron mobility and electron sheet density; Concentration of indium ions at the heterointerface; Role of band gap grading in controlling the potential shape of the quantum well.


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