TITLE

Double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the quantum well

AUTHOR(S)
Tae-Kyung Yoo; Mandeville, Pierre
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1942
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a design for aluminum gallium arsenide/indium gallium arsenide (AlGaAs/InGaAs) heterostructure with graded composition in InGaAs quantum well. Determination of electron mobility and electron sheet density; Concentration of indium ions at the heterointerface; Role of band gap grading in controlling the potential shape of the quantum well.
ACCESSION #
4240765

 

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