TITLE

Depth and radial profiles of defects in Czochralski-grown silicon

AUTHOR(S)
Sharma, S.C.; Hyer, R.C.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1939
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the depth and radial profiles of defects in epitaxial silicon wafers by positron annihilation spectroscopy. Formation of positronium in near surface regions; Occurrence of oxygen precipitation in the annealed wafer; Mechanism for positron trapping into the oxygen clusters.
ACCESSION #
4240764

 

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