Depth and radial profiles of defects in Czochralski-grown silicon

Sharma, S.C.; Hyer, R.C.
October 1992
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1939
Academic Journal
Examines the depth and radial profiles of defects in epitaxial silicon wafers by positron annihilation spectroscopy. Formation of positronium in near surface regions; Occurrence of oxygen precipitation in the annealed wafer; Mechanism for positron trapping into the oxygen clusters.


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