TITLE

Feature size effects on selective area epitaxy of InGaAs

AUTHOR(S)
Cotta, M.A.; Harriott, L.R.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1936
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the use of ultrathin silicon layer as a mask in selective area epitaxy of indium gallium arsenide (InGaAs) by metalorganic molecular beam epitaxy. Increase in the growth rate of InGaAs; Details on the migration length of In and Ga containing species on the crystal surface; Impact of guard rings on surface migration.
ACCESSION #
4240763

 

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