Effects of annealing on the surface morphology of decapped GaAs(001)

Yang, Y.-N.; Luo, Y.S.
October 1992
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1930
Academic Journal
Examines the effects of annealing on the surface morphology of decapped gallium arsenide (GaAs) grown by molecular beam epitaxy. Details on the annealing temperature; Disappearance of small GaAs islands during the annealing process; Creation of a dipole associated with the surface reconstruction.


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