TITLE

Layer-by-layer growth of epitaxial SnO[sub 2] on sapphire by reactive sputter deposition

AUTHOR(S)
Cavicchi, R.E.; Semancik, S.
PUB. DATE
October 1992
SOURCE
Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1921
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of epitaxial tin oxide semiconductor films grown on sapphire substrates by reactive sputter deposition. Use of low energy electron diffraction to assess the lateral registry of the film growth; Details on the lattice matching between the films and substrate; Utilization of atomic force microscopy to examine the surface morphology and roughness.
ACCESSION #
4240758

 

Related Articles

  • Identification of epitaxial Y[sub 2]O[sub 3] inclusions in sputtered YBa[sub 2]Cu[sub 3]O[sub 7].... Catana, A.; Broom, R.F. // Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p1016 

    Identifies epitaxial Y[sub 2]O[sub 3] inclusions in sputtered YBa[sub 2]Cu[sub 3]O[sub 7] films using high-resolution electron microscopy. Implication for film growth; Description of the shapes of precipitates; Correlation of two-dimensional lattices with the interfacial plane; Contribution of...

  • Epitaxial growth of Cu(In, Ga)Se[sub 2] on GaAs(110). Liao, D.; Rockett, A. // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1978 

    Epitaxial Cu(In, Ga)Se[sub 2] (CIGS) films were grown on (110)-oriented GaAs substrates using a hybrid sputtering and evaporation process. The morphological and structural properties were determined by scanning electron microscopy, atomic force microscopy, x-ray diffraction, and electron...

  • Stoichiometry control over a wide composition range of sputtered CuGa[sub x]In[sub (1-x)]Se[sub 2]. Hernandez-Rojas, J.L.; Lucia, M.L.; Martil, I.; Gonzalez-Diaz, G.; Santamaria, J.; Sanchez-Quesada, F. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1239 

    Demonstrates the growth of CuGa[sub x]In[sub (1-x)]Se[sub 2] films by radio frequency sputtering. Observation on the growth temperature and argon pressure adjustment; Effect of the increased substrate temperature on (Ga,In)[sub 2]Se[sub 3] binaries; Impact of copper on the film properties.

  • (111)⇒(001) orientational phase transitions and nature of the insulating state in BiSrCaCuO (2212 and 2223) films. Okunev, V. D.; Samoılenko, Z. A. // Technical Physics Letters;Jan98, Vol. 24 Issue 1, p6 

    The influence of the growth temperature T[sub s] on the structure, optical absorption, and electrical conductivity of BiSrCaCuO films has been studied. It was observed that nonmonotonic changes in the parameters of the films with T[sub s] are caused by (111)→(001) phase transitions at...

  • Laser modulated optical reflectance of thin semiconductor films on glass. Fotsing, J. L. N.; Hoffmeyer, M.; Chotikaprakhan, S.; Dietzel, D.; Pelzl, J.; Bein, B. K.; Cerqueira, F.; Macedo, F.; Ferreira, J. A. // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p873 

    Semiconductor films, deposited by reactive magnetron sputtering on glass substrates, have been analyzed with the help of laser modulated optical reflectance. The results are discussed with respect to the thermal and charge carrier transport properties. Charge carrier surface recombination at the...

  • High misfit epitaxial growth: Superconducting YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films on.... Wang, S.Z.; Xiong, G.C.; He, Y.M.; Luo, B.; Su, W.; Yao, S.D. // Applied Physics Letters;9/16/1991, Vol. 59 Issue 12, p1509 

    Examines the in situ epitaxial growth of superconducting thin films by an off-axis direct current planar magnetron sputtering method. Analysis of the zero-resistance of the thin films; Characteristics of the films; Discussion on the heteroepitaxy of the superconductor system.

  • Enhancement of low-temperature critical epitaxial thickness of Si(100) with ion beam sputtering. Smith, Donald L.; Chau-Chen Chen; Anderson, Greg B.; Hagstrom, Stig B. // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p570 

    Describes the epitaxial growth of argon cation beam sputtered silicon. Observation on the film thickness; Exhibition of an Arrhenius dependence on temperature; Analysis of the surface diffusion; Relation between surface roughness and film thickness.

  • Giant magetoresistance in epitaxial sputtered Fe/Cr(211) superlattices (abstract). Conover, M. J.; Fullerton, Eric E.; Mattson, J. E.; Sowers, C. H.; Bader, S. D. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p7080 

    Presents an abstract of the study 'Giant Magnetoresistance in Epitaxial Sputtered Fe/Cr(211) Superlattices,' by M. J. Conover, Eric E. Fullerton et al., published in the 'Journal of Applied Physics.'

  • Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates. Chichibu, S. F.; Yoshida, T.; Onuma, T.; Nakanishi, H. // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p874 

    A promising approach to obtain epitaxial films of oxide semiconductors was demonstrated, namely helicon-wave-excited-plasma sputtering epitaxy. Due to the surface-damage-free nature, completely α-axis-locked c(0001)-orientation ZnO epilayers were successfully grown on sapphire (0001)...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics