TITLE

Investigation on the growth rate enhancement by Ge during SiGe alloy deposition by chemical

AUTHOR(S)
Ning, Bob M.H.; Crowell, John E.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2914
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines deuterium (D) desorption from germanium (Ge)-covered silicon (Si)(100) surfaces using temperature-programmed desorption. Use of the dissociative adsorption of digermane on Si(100) to prepare the Ge/Si(100) surfaces; Effect of the presence of germanium-on-silicon on the desorption temperature of D; Factors attributed to the growth rate acceleration of alloys.
ACCESSION #
4240735

 

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