Native donors and acceptors in molecular-beam epitaxial GaAs grown at 200 degree Celsius

Look, D.C.; Walters, D.C.
June 1992
Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2900
Academic Journal
Determines the deep donors and acceptors in molecular-beam epitaxial gallium arsenide layer. Use of absorption values and hole photoionization cross sections; Temperature used for GaAs growth; Details on the lateral and depth uniformities of acceptor concentrations.


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