TITLE

Photo-assisted structural transition and oxygen diffusion in solid C[sub 60] films

AUTHOR(S)
Ping Zhou; Rao, A.M.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2871
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes the photo-assisted structural transition and oxygen diffusion in solid C[sub 60] films. Application of Raman scattering technique; Use of alpha resonance scattering to detect oxygen diffusion; Comparison between oxygen-doped C[sub 60] and oxygen free fcc C[sub 60].
ACCESSION #
4240720

 

Related Articles

  • Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li. Bundesmann, C.; Ashkenov, N.; Schubert, M.; Spemann, D.; Butz, T.; Kaidashev, E.M.; Lorenz, M.; Grundmann, M. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1974 

    Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm[sup -1], recently assigned to N incorporation [A....

  • Local vibrational modes as a probe of activation process in p-type GaN. Harima, H.; Inoue, T.; Nakashima, S.; Ishida, M.; Taneya, M. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1383 

    Studies the Raman spectra for a series of Mg-doped GaN thin films grown by metal organic chemical vapor deposition and annealed in N[sub 2] ambiance at different temperatures. Observation of local vibrational modes related to hydrogen; Incorporation of hydrogen impurities in as-grown films.

  • Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates. Kwon, Hyuk-Joo; Lee, Yong-Hyun; Miki, Osamu; Yamano, Hirofumi; Yoshida, Akira // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p937 

    We report Raman scattering study on InN single crystalline films with wurtzite form. The films were grown on sapphire substrates by microwave-excited metalorganic vapor phase epitaxy and optical phonon properties of the films were investigated. Both A1(LO) and E2(2) peaks, which are related to a...

  • Polarized Raman spectra of thin films. III. Conformational analysis of Langmuir–Blodgett multilayers (1 to 49) of barium stearate. Harrand, Monique; Masson, Michèle // Journal of Chemical Physics;11/1/1987, Vol. 87 Issue 9, p5176 

    Polarized Raman spectra of Langmuir–Blodgett multilayers of barium stearate have been studied in the 2800–3000 cm-1 region (C–H stretching vibrations). The samples have been excited by evanescent waves produced by the plasmon illumination method. Only TM excitation can be...

  • Raman study of BaFe[sub 12]O[sub 19] thin films. Kreisel, J.; Pignard, S.; Vincent, H.; Se´nateur, J. P.; Lucazeau, G. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    We report on Raman spectra of BaFe[sub 12]O[sub 19] thin films. These thin films have been deposited by injection chemical vapor deposition on three different substrates: Al[sub 2]O[sub 3] (001), Gd[sub 3]Ga[sub 5]O[sub 12] (111), and Si (100). The observed Raman-active vibrations of the films...

  • Raman investigations of diamond films prepared by combustion flames. Harshavardhan, K. S.; Vijayaraghavan, M. N.; Chandrabhas, N.; Sood, A. K. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3303 

    Discusses the role of deposition conditions in obtaining predominantly diamond films. Preparation of the diamond films; Result of the Raman investigation.

  • Phase transitions in (Ba[sub 0.7]Sr[sub 0.3])TiO[sub 3]/(001)MgO thin film studied by Raman scattering. Yuzyuk, Yu. I.; Sauvajol, J. L.; Simon, P.; Lorman, V. L.; Alyoshin, V. A.; Zakharchenko, I. N.; Sviridov, E. V. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9930 

    Polarized Raman spectra of heteroepitaxial (Ba[SUB0.7]Sr[SUB0.3])TiO[SUB3] thin film deposited on the (001)MgO substrate have been studied in the broad temperature range from 30 to 1300 K. Our results show that the ferroelectric-paraelectric phase transition is markedly shifted to higher...

  • Effect of the metal film thickness on surface-plasmon-enhanced Raman scattering in an attenuated total reflection experiment. Primeau, N.; Coutaz, J. L.; Abello, L. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5158 

    Presents the measured dependence of the Raman intensity on the thickness of the metal film in a Kretschmann geometry when surface plasmons are excited. Frequencies wherein maximum of the Raman signal is achieved; Description and function of surface plasmons; Origins of the enhancement process...

  • Mechanism of diamond growth by chemical vapor deposition: Carbon-13 studies. D’Evelyn, M. P.; Chu, C. J.; Hange, R. H.; Margrave, J. L. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1528 

    Presents a study which re-examined previous carbon 13 experiments on the mechanism of diamond film growth by chemical deposition. Analysis of the nonlinear dependence of the first-order Raman shift frequency on [sup13]carbon mole fraction for mixed-isotope diamond films; Methods; Results and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics