TITLE

Enhanced nucleation and growth of diamond on SiC by plasma enhanced chemical vapor deposition

AUTHOR(S)
Yehoda, J.E.; Fuentes, R.I.
PUB. DATE
June 1992
SOURCE
Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2865
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the nucleation and growth of diamond on silicon carbide by plasma enhanced chemical vapor deposition using thin film metals. Variation of iron (Fe) film thickness; Influence of Fe film thickness on growth rate and initial nucleation; Factors responsible for the enhanced nucleation.
ACCESSION #
4240718

 

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