TITLE

Origin of dual epitaxy in the growth of CdTe on (211) GaAs

AUTHOR(S)
Nakamura, Y.; Otsuka, N.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1372
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analyzes the atomic structure of the (133)cadmium telluride/(211)gallium arsenide interface. Use of high resolution transmission electron microscopy; Origin of the dual epitaxy; Presence of a mechanism accommodating the lattice mismatch at the interface.
ACCESSION #
4240691

 

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