Origin of dual epitaxy in the growth of CdTe on (211) GaAs

Nakamura, Y.; Otsuka, N.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1372
Academic Journal
Analyzes the atomic structure of the (133)cadmium telluride/(211)gallium arsenide interface. Use of high resolution transmission electron microscopy; Origin of the dual epitaxy; Presence of a mechanism accommodating the lattice mismatch at the interface.


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