Characterization of epitaxial and oxidation-induced stacking faults in silicon: The influence of

Higgs, V.; Goulding, M.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1369
Academic Journal
Presents the characterization of the epitaxial stacking faults in silicon epilayers. Growth of the epilayers by low-pressure chemical vapor deposition and oxidation-induced stacking faults; Introduction of dislocation luminescence features; Details of the deliberate surface contamination.


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