TITLE

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

AUTHOR(S)
Khan, M. Asif; Skogman, R.A.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1366
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the switched atomic layer epitaxy of single crystal gallium nitride over basal plane sapphire substrates. Use of a low pressure metalorganic chemical vapor deposition system; Resistivity of the material; Display of excellent band-edge photoluminescence.
ACCESSION #
4240689

 

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