TITLE

High-resolution electron microscopy of growth interruption effect on AlAs/GaAs interfacial

AUTHOR(S)
Ikarashi, Nobuyuki; Tanaka, Masaaki
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1360
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effects of growth interruption on the interfacial structure of aluminum arsenide/gallium arsenide grown by molecular beam epitaxy. Use of high-resolution transmission electron microscopy (TEM); Development of a TEM preparation technique; Increase in the intervals of the atomic step structures.
ACCESSION #
4240687

 

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