Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application for

Kroesen, G.M.W.; Oehrlein, G.S.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1351
Academic Journal
Investigates the complex refractive index of silicon germanide layers on silicon substrates. Use of in situ ellipsometry during reactive ion etching; Determination of the germanium concentration; Inversion of the ellipsometry equations.


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