Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by

Glaeser, Annette S.; Merz, James L.
March 1992
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1345
Academic Journal
Presents the characterization of zinc selenide/gallium arsenide heterostructure bipolar transistors grown by molecular beam epitaxy. Combination of a valence band offset with a conduction band offset; Determination of common emitter direct current gains; Applicability of the device to the study and improvement of II-VI/III/V interface.


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