TITLE

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by

AUTHOR(S)
Glaeser, Annette S.; Merz, James L.
PUB. DATE
March 1992
SOURCE
Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1345
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents the characterization of zinc selenide/gallium arsenide heterostructure bipolar transistors grown by molecular beam epitaxy. Combination of a valence band offset with a conduction band offset; Determination of common emitter direct current gains; Applicability of the device to the study and improvement of II-VI/III/V interface.
ACCESSION #
4240682

 

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